Title :
Fabrication and Electrical Characteristics of AgTCNQ Crossbar Switches for Organic Molecular Memories and Logics
Author :
Tu, D.Y. ; Wang, C.S. ; Ji, Z.Y. ; Hu, W.P. ; Liu, M.
Author_Institution :
Key Lab of Nano-Fabrication and Novel devices integrated technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029
Abstract :
The 8x8 crossbar switches with sandwiching AgTCNQ (TCNQ = 7,7,8,8-tetracyano-p-quinodimethane) organic molecular materials were successfully fabricated, and electrical characteristics of the cross points were studied in this paper. In the OFF state, the resistance of switches was 5.60x103ohms that stands for "0"; while in the ON state, the resistance of switches was 1.96x103ohms that stands for "1". This phenomenon was simply interpreted based on phase transition caused by charge transfer. The switches could be used for memories as well as electrical configurable logic gates, such as an AND, an OR and even an NOT gate.
Keywords :
CMOS technology; Charge transfer; Costs; Electric resistance; Electric variables; Fabrication; Logic; Moore´s Law; Switches; Wires;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635338
