Title :
Globally hyperbolic moment method for BTE including phonon scattering
Author :
Wenqi Yao ; Ruo Li ; Tiao Lu ; Xiaoyan Liu ; Gang Du ; Kai Zhao
Author_Institution :
Sch. of Math. Sci., Peking Univ., Beijing, China
Abstract :
A globally hyperbolic high-order moment method of the Boltzmann transport equation (BTE) is proposed in [1], [2], and here it is extended for the BTE with the electron-phonon scattering term to simulate a silicon nano-wire (SNW). Convergence with respect to the order of the moment system and the characteristics of SNW including the I-V curve are studied.
Keywords :
Boltzmann equation; Poisson equation; electron-phonon interactions; elemental semiconductors; nanowires; silicon; Boltzmann transport equation; I-V curve; Si; electron-phonon scattering; globally hyperbolic high-order moment method; silicon nanowire; Computational modeling; Convergence; Frequency modulation; Mathematical model; Method of moments; Scattering; Semiconductor device modeling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650634
