Title :
Performance evaluation of p-channel FinFETs using 3D ensemble Monte Carlo simulation
Author :
Riddet, C. ; Towie, E.A. ; Asenov, Asen
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
The impact of alternative channel materials in p-channel FinFETs is considered here using a combination of 3D drift diffusion and ensemble Monte Carlo simulations. This simulation approach allows both the electrostatics and the drive current of these devices to be properly evaluated in determining the potential performance improvement that can be derived from these devices.
Keywords :
MOSFET; Monte Carlo methods; electrostatics; semiconductor device models; 3D drift diffusion; 3D ensemble Monte Carlo simulation; alternative channel materials; drive current; electrostatics; p-channel FinFET; performance evaluation; FinFETs; Monte Carlo methods; Performance evaluation; Scattering; Silicon; Strain; FinFET; Germanium; Monte Carlo; SiGe; Silicon; strain;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650637
