An analytical model for predicting forming/switching time in conductive-bridge resistive random-access memory (CBRAM)

Author

Shaoli Lv ; Jun Liu ; Lingling Sun ; He Wang ; Jinyu Zhang ; Zhiping Yu

Author_Institution

Key Lab. of RF Circuits & Syst. (designated by Minist. of Educ. in China), Hangzhou Dianzi Univ., Hangzhou, China

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

364

Lastpage

367

Abstract

Analytical solutions (i.e., compact model) to differential equations governing the surface movement of conductive filament (CF) in CBRAM have been developed. Time needed for forming and switching of memory cell can readily be evaluated based on the device structure and the applied bias. The accuracy of the model has been verified by comparison to both experimental and numerical simulation results for Ag-GeS₂-W CBRAM cells.

Keywords

differential equations; germanium compounds; numerical analysis; random-access storage; silver; tungsten; Ag-GeS₂-W; CBRAM memory cell; CF; conductive filament; conductive-bridge resistive random-access memory cell; differential equation; forming-switching time prediction; numerical simulation; surface movement; Analytical models; Anodes; Cathodes; Differential equations; Integrated circuit modeling; Random access memory; Switches; CBRAM; cation migration; filament growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650650

Filename

6650650