Rigorous simulation study of a novel non-volatile magnetic flip-flop

The ever increasing demand in fast and cheap bulk memory as well as electronics in general has driven the scaling efforts in CMOS since its very beginnings. Today, pushing the limits of integration density is still a major concern, but gradually power efficient computing gains more and more interest. A possible way to reduce power consumption is to introduce non-volatility into the devices. Thus power is consumed only, when information is written or read out, while the rest of the time the devices preserve the information with out any power demand. In this work we propose a novel non-volatile magnetic flip-flop which shifts the actual logic operation from the electric signal domain to the magnetic domain, operating via constructive and destructive superposition of spin waves generated by the spin transfer torque effect. Furthermore we carried out a rigorous simulation study for three different device sizes and found them operational between ≈4×10¹⁰A/m² and ≈10¹²A/m² at switching times from tens of nanoseconds to picoseconds.