Title :
Calculation of the valence band structure in strained In0.7Ga0.3As devices with different surface orientation
Author :
Pengying Chang ; Lang Zeng ; Xiaoyan Liu ; Kangliang Wei ; Jieyu Qin ; Kai Zhao ; Gang Du ; Xing Zhang
Author_Institution :
Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
Abstract :
Using the eight-band k·p Hamiltonian approach, the valence band structure of strained In0.7Ga0.3As is calculated for (001), (110) and (111) orientation. The impact of biaxial strain and uniaxial strain on energy band splitting and warping is investigated. The dependency of the valence band structure on the surface electric field and body thickness is also studied in this work.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; valence bands; (001) orientation; (110) orientation; (111) orientation; Hamiltonian approach; In0.7Ga0.3As; biaxial strain; body thickness; energy band splitting; strained orientation; surface electric field; surface orientation; uniaxial strain; valence band structure; warping; Educational institutions; Electric fields; Microelectronics; Quantization (signal); Stress; Uniaxial strain; In0.7Ga0.3As; biaxial strain; body thickness; eight-band k·p method; uniaxial strain;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650656
