Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se, Te) n-MOSFETs

We study the transport properties of monolayer transition metal Dichalcogenides (TMDs) MX₂ (M = Mo, W; X = S, Se, Te) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using an atomistic tight-binding full-band ballistic quantum transport simulations, with hopping potentials obtained from density functional theory. We discuss the subthreshold slope (SS), drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX₂ MOSFETs. We also report the possibility of negative differential resistance to the extent quasi-ballistic transport exists in such nanostructure TMD MOSFETs.