• DocumentCode
    1989704
  • Title

    A process/device/circuit/system compatible simulation framework for poly-Si TFT based SRAM design

  • Author

    Chen-Wei Lin ; Chih-Hsiang Ho ; Chao Lu ; Chao, Mango C.-T ; Roy, Kaushik

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    3-5 Sept. 2013
  • Firstpage
    440
  • Lastpage
    443
  • Abstract
    Operation characteristics of low temperature poly silicon thin-film transistor (LTPS-TFT) based systems vary significantly with design choices and parameters (i.e., process, device, circuit and system). Due to the lack of cross-layer simulation tool, conventional designs only optimize the design layers in isolation, leading to sub-optimal solutions. We present a cross-layer simulation framework for the design of LTPS-TFT Static Random Access Memory (SRAM). The proposed simulation framework optimizes design parameters considering the entire design space and hence, greatly reduces design complexity and efforts. The benefits of our proposed framework are illustrated by case studies.
  • Keywords
    SRAM chips; circuit simulation; elemental semiconductors; silicon; thin film transistors; SRAM design; Si; cross-layer simulation framework; isolation; low temperature poly silicon thin-film transistor; operation characteristics; polySi TFT; process/device/circuit/system compatible simulation framework; static random access memory; sub-optimal solutions; Grain size; Integrated circuit modeling; Random access memory; Semiconductor process modeling; Silicon; Thin film transistors; LTPS; SRAM; TFT; design optimization; poly-Si; yield estimation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
  • Conference_Location
    Glasgow
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-5733-3
  • Type

    conf

  • DOI
    10.1109/SISPAD.2013.6650669
  • Filename
    6650669