DocumentCode
1989704
Title
A process/device/circuit/system compatible simulation framework for poly-Si TFT based SRAM design
Author
Chen-Wei Lin ; Chih-Hsiang Ho ; Chao Lu ; Chao, Mango C.-T ; Roy, Kaushik
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
440
Lastpage
443
Abstract
Operation characteristics of low temperature poly silicon thin-film transistor (LTPS-TFT) based systems vary significantly with design choices and parameters (i.e., process, device, circuit and system). Due to the lack of cross-layer simulation tool, conventional designs only optimize the design layers in isolation, leading to sub-optimal solutions. We present a cross-layer simulation framework for the design of LTPS-TFT Static Random Access Memory (SRAM). The proposed simulation framework optimizes design parameters considering the entire design space and hence, greatly reduces design complexity and efforts. The benefits of our proposed framework are illustrated by case studies.
Keywords
SRAM chips; circuit simulation; elemental semiconductors; silicon; thin film transistors; SRAM design; Si; cross-layer simulation framework; isolation; low temperature poly silicon thin-film transistor; operation characteristics; polySi TFT; process/device/circuit/system compatible simulation framework; static random access memory; sub-optimal solutions; Grain size; Integrated circuit modeling; Random access memory; Semiconductor process modeling; Silicon; Thin film transistors; LTPS; SRAM; TFT; design optimization; poly-Si; yield estimation;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650669
Filename
6650669
Link To Document