Title :
Analysis of GIDL Dependence on STI-induced Mechanical Stress
Author :
Yang, Wenwei ; Qin, Guoxuan ; Shao, Xue ; Yu, Zhiping ; Tian, Lilin
Author_Institution :
Institute of Microelectronics, Tsinghua University, Beijing, China. email: yang-ww@tsinghua.edu.cn
Abstract :
The mechanical stress induced by shallow trench isolation (STI) signifilcantly affects the device behavior in the advanced CMOS technology. This paper presents an STI-dependent gate-induced drain leakage (GIDL) model and investigates the physical mechanisms in this phenomenon. Our simulation indicates that STI-induced compressive stress causes energy band gap narrowing. As a consequence, the effective tunneling barrier height becomes lower and intrinsic carrier concentration increases. These two factors enhance band-to-band tunneling (BBT) and trap-assisted tunneling (TAT), respectively. And an asymmetric layout is proposed to reduce the GIDL current.
Keywords :
GIDL; STI; mechanical stress; CMOS technology; Compressive stress; Dielectrics; Electric variables; Isolation technology; Numerical simulation; Photonic band gap; Semiconductor device modeling; Semiconductor devices; Tunneling; GIDL; STI; mechanical stress;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635390