Title :
Monolithic GaAs Wideband Low Noise RLC Feedback Amplifiers
Author :
Weitzel, C.M. ; Scheitlin, D.
Author_Institution :
Semiconductor Research and Development Laboratories, Motorola, Inc., 5005 E. McDowell Road, Phoenix, Arizona 85008, USA
Abstract :
One, two, and three stage RLC feedback GaAs monolithic amplifiers were designed, fabricated and tested. The fabrication process uses two dielectrics, polyimide and silicon nitride, to achieve low capacitance metal cross overs and high capacitance per unit area capacitors. The amplifiers had gains 8 dB/stage with a 3 dB cut off frequency of 3.2 GHz and a typical noise figure of 4 dB.
Keywords :
Broadband amplifiers; Capacitance; Capacitors; Dielectrics; Fabrication; Feedback amplifiers; Gallium arsenide; Polyimides; Silicon; Testing;
Conference_Titel :
Microwave Conference, 1984. 14th European
Conference_Location :
Liege, Belgium
DOI :
10.1109/EUMA.1984.333362