DocumentCode :
1990155
Title :
Monolithic GaAs Wideband Low Noise RLC Feedback Amplifiers
Author :
Weitzel, C.M. ; Scheitlin, D.
Author_Institution :
Semiconductor Research and Development Laboratories, Motorola, Inc., 5005 E. McDowell Road, Phoenix, Arizona 85008, USA
fYear :
1984
fDate :
10-13 Sept. 1984
Firstpage :
488
Lastpage :
493
Abstract :
One, two, and three stage RLC feedback GaAs monolithic amplifiers were designed, fabricated and tested. The fabrication process uses two dielectrics, polyimide and silicon nitride, to achieve low capacitance metal cross overs and high capacitance per unit area capacitors. The amplifiers had gains 8 dB/stage with a 3 dB cut off frequency of 3.2 GHz and a typical noise figure of 4 dB.
Keywords :
Broadband amplifiers; Capacitance; Capacitors; Dielectrics; Fabrication; Feedback amplifiers; Gallium arsenide; Polyimides; Silicon; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1984. 14th European
Conference_Location :
Liege, Belgium
Type :
conf
DOI :
10.1109/EUMA.1984.333362
Filename :
4132080
Link To Document :
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