DocumentCode
1990161
Title
An improved model for delay/energy estimation in near-threshold flip-flops
Author
Fisher, Sagi ; Dagan, Raz ; Blonder, Sagi ; Fish, Alexander
Author_Institution
Low Power Circuits & Syst. Lab., Ben-Gurion Univ., Beer-Sheva, Israel
fYear
2011
fDate
15-18 May 2011
Firstpage
1065
Lastpage
1068
Abstract
Near-threshold (NT) FFs, which operate from a supply voltage close to the transistor threshold voltage, are considered as a good alternative for portable applications, where low power dissipation with reasonable performance is the main demand. This paper presents an improved model for delay/energy estimation of the NT FFs. The proposed model, based on the EKV current and alpha power law models, improves the existing model by taking into account the rise and fall times of all internal nodes of the FF. The fitting parameters that are required for the model development were extracted from measurements of a test chip that was fabricated in a standard CMOS low power 80nm process. We show how the proposed model can be utilized for NT Master-Slave FF delay and energy estimation, showing an improvement of up to xlOO in the precision of calculations compared to the existing model.
Keywords
CMOS logic circuits; flip-flops; transistors; CMOS low power process; EKV current; NT FF; NT master-slave FF delay; alpha power law models; delay-energy estimation; near-threshold flip-flops; power dissipation; size 80 nm; test chip measurements; transistor threshold voltage; Analytical models; Delay; Inverters; Logic gates; Mathematical model; Semiconductor device modeling; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location
Rio de Janeiro
ISSN
0271-4302
Print_ISBN
978-1-4244-9473-6
Electronic_ISBN
0271-4302
Type
conf
DOI
10.1109/ISCAS.2011.5937753
Filename
5937753
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