Title :
Hot-carrier reliability in submicrometer LDMOS transistors
Author :
Versari, R. ; Pieracci, A. ; Manzini, S. ; Contiero, C. ; Ricco, B.
Author_Institution :
Dipt. di Elettronica Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
This paper provides a physical basis for the experimentally determined hot-electron-limited safe operating area of submicrometer LDMOS transistors under static bias conditions. The physical interpretation of the device behavior is based on the analysis of the bias-dependent gate and substrate currents and of the relative induced degradation.
Keywords :
hot carriers; power MOSFET; semiconductor device models; semiconductor device reliability; 0.6 mum; 16 V; bias-dependent gate currents; bias-dependent substrate currents; hot-carrier reliability; hot-electron-limited safe operating area; power LDMOS transistors; relative induced degradation; static bias conditions; submicrometer LDMOS transistors; Circuit synthesis; Degradation; Doping profiles; Helium; Hot carriers; Implants; MOSFETs; Microelectronics; Substrates; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650402
