• DocumentCode
    1990395
  • Title

    Investigation of MOS-NDR Voltage Controlled Ring Oscillator Fabricated by CMOS Process

  • Author

    Gan, Kwang-Jow ; Liang, Dong-Shong ; Hsiao, Chung-Chih ; Tsai, Cher-Shiung ; Chen, Yaw-Hwang

  • Author_Institution
    Department of Electronic Engineering, the Kun Shan University, Taiwan
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    825
  • Lastpage
    827
  • Abstract
    A voltage-controlled ring oscillator (VCO) based on novel MOS-NDR circuit is described. This MOS-NDR circuit is made of metal-oxide-semiconductor emiconductor ield-effect-transistor ( MOS) devices that can exhibit the negative differential resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. The VCO is constructed by three low-power ower MOS-NDR inverters. This novel VCO has a range of operation frequency from 38MHz to 162MHz. It consumes 24mW in its central frequency of 118MHz using a 2V power supply. This VCO is fabricated by 0.35μm CMOS process and occupy an area of 0.015 mm2.
  • Keywords
    CMOS process; Circuits; Frequency; Inverters; Logic devices; MOS devices; Ring oscillators; System-on-a-chip; Voltage control; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635405
  • Filename
    1635405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1990395