Title :
High Real Estate Efficiency, Wideband Monolithic GaAs Amplifiers
Author :
Pauker, Vlad ; Bru, Bernard ; Binet, Michel
Author_Institution :
LABORATOIRES D´´ELECTRONIQUE ET DE PHYSIQUE APPLIQUEE 3, avenue Descartes, 94450 LIMEIL-BREVANNES, France
Abstract :
Small size wideband MMIC amplifiers of two types : high gain and low noise have been developed. DC coupling through the buffer stages have been used to avoid the MIM capacitors which take room and need a more complex technology. A real estate efficiency of 110 dB/mm2 has been achieved for high gain 0.1 to 4.5 GHz amplifiers and of 65 dB/mm2 for low noise DC to 1.7 GHz amplifiers.
Keywords :
Broadband amplifiers; Coupling circuits; FETs; Frequency; Gallium arsenide; Impedance matching; Low-noise amplifiers; MMICs; Performance gain; Voltage;
Conference_Titel :
Microwave Conference, 1984. 14th European
Conference_Location :
Liege, Belgium
DOI :
10.1109/EUMA.1984.333436
