Effect of annealing on structural and optical properties of aluminum doped ZnO thin films

Author

Ismail, A. ; Abdullah, M.J.

Author_Institution

Sch. of Phys., Univ. Sains Malaysia, Minden, Malaysia

fYear

2011

fDate

16-18 Sept. 2011

Firstpage

4780

Lastpage

4782

Abstract

Al doped ZnO (AZO) thin films were prepared on glass and Si (100) substrates by RF sputtering. The crystallinity and the optical properties of the films were affected by the annealing process. XRD results showed that all the films exhibitted ZnO (002) peak. The (002) peak for as-deposited, and annealed films (at 400° and 500° C) appeared at 34.3464°, 34.3750° and 34.5155° respectively while for the undoped ZnO it was at 34.1442°. The shift of (002) peak towards higher Bragg angles suggested that Al⁺³ ions had replaced Zn⁺²substitution ally. The films showed a high transmittance of above 80 % in the visible range. The calculated values of band gaps were 3.520 eV, 3.387 eV and 3.378 eV for as-deposited and annealed Al-doped ZnO films at 400° C and 500° C.

Keywords

II-VI semiconductors; aluminium; annealing; crystal structure; optical properties; sputtered coatings; zinc compounds; Bragg angle; RF sputtering; Si; ZnO:Al; annealing process; crystallinity; glass substrate; optical properties; silicon substrate; structural properties; temperature 400 C; temperature 500 C; Annealing; Optical device fabrication; Optical diffraction; Optical films; Substrates; Zinc oxide; optical properties and X-ray diffraction; zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Control Engineering (ICECE), 2011 International Conference on

Conference_Location

Yichang

Print_ISBN

978-1-4244-8162-0

Type

conf

DOI

10.1109/ICECENG.2011.6057952

Filename

6057952