DocumentCode
1992813
Title
A compact Schottky body contact technology for SOI transistors
Author
Sleight, J. ; Mistry, K.
Author_Institution
Digital Equipment Corp., Hudson, MA, USA
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
419
Lastpage
422
Abstract
A self-aligned Schottky diode method for body contacting partially depleted silicon-on-insulator transistors applicable to technologies that incorporate silicide cladded junctions is presented. The Schottky body contacted transistor requires no extra manufacturing steps, uses the same or less area than a transistor using other body contacting schemes and allows bi-directional operation.
Keywords
MOS integrated circuits; Schottky diodes; integrated circuit design; masks; silicon-on-insulator; SOI transistors; Schottky body contact technology; bi-directional operation; partially depleted silicon-on-insulator transistors; self-aligned Schottky diode method; silicide cladded junctions; Bidirectional control; Circuits; Cobalt; Implants; MOSFETs; Manufacturing; Schottky diodes; Silicides; Silicon on insulator technology; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650414
Filename
650414
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