Title :
Fmax enhancement of dynamic threshold-voltage MOSFET (DTMOS) under ultra-low supply voltage
Author :
Tanaka, T. ; Momiyama, Y. ; Sugii, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
The high frequency characteristics of DTMOS are described here for the first time. Our DTMOS has a small parasitic resistance due to an optimized Co salicide technology and a small parasitic capacitance due to a reduction in the overlapped region between the gate and drain, which is achieved by gate poly-Si oxidation before LDD implantation. We obtained an Ft of 78 GHz and an Fmax of 3.7 GHz for a 0.1-/spl mu/m-Leff DTMOS even at a supply voltage of 0.7 V. We also noted an Fmax enhancement of 1.5 times compared to that of a conventional SOI MOSFET, which is attributed to a high transconductance and a large output resistance.
Keywords :
MOSFET; UHF field effect transistors; capacitance; microwave field effect transistors; oxidation; semiconductor device metallisation; 0.1 micron; 0.7 V; 3.7 GHz; 78 GHz; DTMOS; dynamic threshold-voltage MOSFET; gate polysilicon oxidation; high frequency characteristics; output resistance; overlapped region; parasitic capacitance; parasitic resistance; salicide technology; transconductance; ultra-low supply voltage; Cutoff frequency; Immune system; Laboratories; MOSFET circuits; Oxidation; Parasitic capacitance; Radio frequency; Threshold voltage; Transceivers; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650415
