DocumentCode
1993041
Title
Investigation of Some Guiding Structures for Low-Noise FET Amplifiers
Author
Angelov, I. ; Spasov, A. ; Stoev, I. ; Urshev, L.
Author_Institution
Institute of Electronics, Bulgarian Academy of Sciences, boul. Lenin 72, Sofia 1784
fYear
1985
fDate
9-13 Sept. 1985
Firstpage
535
Lastpage
540
Abstract
The characteristics of low-noise amplifiers using various guiding structures have been investigated. A 0.15-0.20 dB improvement over the conventional microstrip amplifiers has been achieved at 48Hz with coplanar structures. Minimum noise temperatures of 45K and 10-12 K have been obtained at room and Iiquid nitrogen temperatures respectively. A two stage amplifier was realized at 198Hz exhtbiting a gain of 13-14 dB and 3 dB noise at room temperatures.
Keywords
Acoustic reflection; Capacitors; Equivalent circuits; FETs; Low-noise amplifiers; Microstrip; Nitrogen; Noise figure; Noise measurement; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1985. 15th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.1985.333533
Filename
4132221
Link To Document