Title :
A 0.1 to 25 GHz HMIC Distributed Amplifier on AL203 Substrate
Author_Institution :
LABORATOIRES D´´ELECTRONIQUE ET DE PHYSIQUE APPLIQUE 3, avenue Descartes, 94450 LIMEIL-BREVANNES, FRANCE. A member of Philips Research Organization
Abstract :
This paper carries out experimental results concerning distributed amplifier on alumina substrate. This amplifier, using 8 FETs of 0.5 ¿m gate length fabricated at LEP exhibits 6 ± 1 dB gain over the frequency range 0.1 to 25 GHz. In this paper, we describe the design of such an amplifier and we discuss possibilities for further improvements in distributed amplification.
Keywords :
Bandwidth; Capacitance; Distributed amplifiers; Electrical resistance measurement; FETs; Frequency measurement; Gain; Gallium arsenide; Power transmission lines; Scattering parameters;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333534
