• DocumentCode
    1993440
  • Title

    A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs

  • Author

    Siconolfi, S. ; Hubert, Guillaume ; Artola, L. ; Darracq, F. ; David, J.-P.

  • Author_Institution
    French Aerosp. Lab. (ONERA), Toulouse, France
  • fYear
    2013
  • fDate
    23-27 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper investigates SEB physical/device mechanisms in power MOSFETs, and proposes SEB prediction model. Investigations relied on 2D TCAD simulations. Calculated SEB risk for IRF360 is consistent with ground experimental values and in-flight data.
  • Keywords
    power MOSFET; radiation hardening (electronics); semiconductor device models; technology CAD (electronics); IRF360; TCAD; physical prediction model; power MOSFET; single event burnout; Electric fields; Epitaxial layers; MOSFET; Predictive models; Protons; Semiconductor device modeling; Semiconductor process modeling; Power MOSFETs; Single Event Burnout; TCAD simulations; prediction model;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
  • Conference_Location
    Oxford
  • Type

    conf

  • DOI
    10.1109/RADECS.2013.6937442
  • Filename
    6937442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1993440