• DocumentCode
    1993635
  • Title

    Proton, electron and heavy ion single event effects on the HAS2 CMOS Image Sensor

  • Author

    Beaumel, M. ; Herve, D. ; Van Aken, Dirk ; Pourrouquet, P. ; Poizat, Marc

  • Author_Institution
    EADS SODERN, Limeil-Brévannes, France
  • fYear
    2013
  • fDate
    23-27 Sept. 2013
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    The Single Event Effects sensitivity of the HAS2 CMOS Image Sensor has been characterized with protons, electrons and heavy ions. Effects in the photosensitive area and in the readout integrated circuit have been studied.
  • Keywords
    CMOS image sensors; proton effects; radiation hardening (electronics); HAS2 CMOS image sensor; electron effects; heavy ion single event effects; photosensitive area; proton effects; readout integrated circuit; Arrays; Protons; Radiation effects; Shift registers; Single event upsets; CMOS Image Sensors; Radiation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
  • Conference_Location
    Oxford
  • Type

    conf

  • DOI
    10.1109/RADECS.2013.6937451
  • Filename
    6937451
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1993635