Boron-enhanced-diffusion of boron: The limiting factor for ultra-shallow junctions

Author

Agarwal, A. ; Eaglesham, D.J. ; Gossmann, H.-J. ; Pelaz, L. ; Herner, S.B. ; Jacobson, D.C. ; Haynes, T.E. ; Erokhin, Y. ; Simonton, R.

Author_Institution

Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

467

Lastpage

470

Abstract

Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due to excess interstitials from the implant. It is shown that TED from a fixed Si dose implanted at energies from 0.5 to 20 keV into boron doping-superlattices decreases linearly with decreasing Si ion range, virtually disappearing at sub-keV energies. However, for sub-keV B implants diffusion remains enhanced and x/sub j/ is limited to /spl ges/100 nm at 1050/spl deg/C. We term this enhancement, which arises in the presence of B atomic concentrations at the surface of /spl ap/6%, Boron-Enhanced-Diffusion (BED).

Keywords

boron; diffusion; elemental semiconductors; interstitials; ion implantation; semiconductor superlattices; silicon; 0.5 to 20 keV; 100 nm; 1050 C; Si:B; boron doping-superlattice; boron-enhanced-diffusion; interstitials; ion implantation; transient enhanced diffusion; ultra-shallow junction; Atomic layer deposition; Boron; DSL; Epitaxial growth; Implants; Jacobian matrices; Laboratories; Molecular beam epitaxial growth; Simulated annealing; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650425

Filename

650425