DocumentCode
1995791
Title
Wideband L-S band SiC power amplifiers
Author
Baranov, V. ; Zimin, R. ; Matveev, A. ; Kistchinsky, A. ; Sukhanov, D.
Author_Institution
Microwave Syst. JSC, Moscow, Russia
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
55
Lastpage
56
Abstract
Results of engineering and a research of wideband L-S band (0,5...2,5) GHz amplifiers with CW output power from 20 to 200 Watt based on SiC-MESFETS are presented. It is included: (0,5...1) GHz (PM051) amplifier with output powers (182...269) W and efficiency (20...32) %; (0,8...1,6) GHz (PM0816) amplifier with output powers (117...137) W and efficiency (26...33) %; (0,8...2,5) GHz (PM0825-1) amplifier with output powers (21,5...27,8) W and efficiency (14...20) %. Fig. 1 and fig. 3 show output balanced chains of an amplifier.
Keywords
Schottky gate field effect transistors; power amplifiers; silicon compounds; wideband amplifiers; PM051 amplifier; PM0816 amplifier; PM0825-1 amplifier; SiC; SiC-MESFETS; frequency 0.5 GHz to 2.5 GHz; power 117 W to 137 W; power 182 W to 263 W; power 20 W to 200 W; power 21.5 W to 27.8 W; wideband L-S band SiC power amplifier; Bismuth; Broadband amplifiers; Helium; Power amplifiers; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2009. CriMiCo 2009. 19th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-4796-1
Type
conf
Filename
5293228
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