DocumentCode
1996133
Title
Modeling of ultra-low energy boron implantation in silicon
Author
Hobler, G. ; Vuong, H.-H. ; Bevk, J. ; Agarwal, A. ; Gossmann, H.-J. ; Jacobson, D.C. ; Foad, M. ; Murrell, A. ; Erokhin, Y.
Author_Institution
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
489
Lastpage
492
Abstract
Monte Carlo simulations of 0.25-2 keV B implantations are shown to agree well with molecular dynamics simulations and SIMS data. The tails of point responses and dopant distributions at mask edges are found to be dominated by <110> channeling and to have only a slight dependence on tilt angle. A 3-D analytical model is proposed which approximates the Monte Carlo distributions well.
Keywords
Monte Carlo methods; boron; channelling; doping profiles; elemental semiconductors; ion implantation; silicon; 0.25 to 2 keV; 3D analytical model; Monte Carlo simulation; Si:B; channeling; dopant distribution; mask edge; point response; silicon; tilt angle; ultra-low energy boron implantation; Analytical models; Artificial intelligence; Boron; Implants; Ion implantation; Jacobian matrices; Monte Carlo methods; Probability distribution; Round robin; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650430
Filename
650430
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