DocumentCode
1996274
Title
Boosted readout for CMOS APS pixels
Author
Ay, Suat U.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Idaho, Moscow, ID, USA
fYear
2011
fDate
15-18 May 2011
Firstpage
2205
Lastpage
2208
Abstract
In order to reduce power consumption and improve low-voltage operation capability of standard three transistor (3T) CMOS active pixel sensor (APS), new pixel readout is proposed utilizing supply boosting technique (SBT). Pixel supply voltage as well as reset and select signals for APS pixel are boosted to achieve wider and extended linear operating range in a standard CMOS process with high-Vt transistors. Reset and supply boosting was used for extending dynamic range of the pixel source follower (PSF) amplifier, while the select signal boosting was utilized for linearizing transfer characteristics of the PSF. Extension of PSF dynamic range using reset, select, and supply boosting (RSSB) resulted in operation of 3T APS pixel at 1.2V supply with 150mV dynamic range even though the threshold of the NMOS device was 0.8V. Proposed method does not degrade the device reliability margins and use single supply input.
Keywords
CMOS analogue integrated circuits; CMOS image sensors; amplifiers; low-power electronics; readout electronics; semiconductor device reliability; CMOS APS pixel; CMOS active pixel sensor; NMOS device threshold; PSF dynamic; boosted readout; device reliability margin; high-Vt transistor; linear operating range; low voltage operation capability; pixel readout; pixel source follower amplifier; pixel supply voltage; power consumption; signal boosting; standard CMOS process; standard three transistor; supply boosting technique; transfer characteristics; voltage 0.8 V; voltage 1.2 V; voltage 150 mV; Boosting; CMOS integrated circuits; CMOS technology; Dynamic range; Pixel; Threshold voltage; Transistors; CMOS APS; image sensors; low-power; low-voltage; supply boosting;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location
Rio de Janeiro
ISSN
0271-4302
Print_ISBN
978-1-4244-9473-6
Electronic_ISBN
0271-4302
Type
conf
DOI
10.1109/ISCAS.2011.5938038
Filename
5938038
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