• DocumentCode
    1997093
  • Title

    A new clustering model for runaway boron pile-up effect

  • Author

    Orlowski, M.

  • Author_Institution
    Motorola Moscow Res. Lab., Russia
  • fYear
    1997
  • fDate
    10-10 Dec. 1997
  • Firstpage
    505
  • Lastpage
    508
  • Abstract
    A novel clustering model is proposed to explain the anomalous boron pile-up effect during an RTP anneal. The model assumes that the clustering rate depends on local total concentration causing accelerated clustering at high doping levels. At lower concentrations the model reproduces conventional clustering models.
  • Keywords
    boron; elemental semiconductors; ion implantation; rapid thermal annealing; silicon; RTP annealing; Si:B; clustering model; doping; runaway boron pile-up effect; Acceleration; Annealing; Boron; Doping; Implants; Laboratories; Physics; Semiconductor process modeling; Shape; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4100-7
  • Type

    conf

  • DOI
    10.1109/IEDM.1997.650434
  • Filename
    650434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1997093