A new silicon detector for microdosimetry applications in proton therapy

Author

Rosenfeld, B. ; Bradley, P.D. ; Cornelius, I. ; Kaplan, G.I. ; Allen, B.J. ; Flanz, J.B. ; Goitein, M. ; Van Meerbeeck, A. ; Schubert, J. ; Bailey, J. ; Takada, Y. ; Maruhashi, A. ; Hayakawa, Y.

Author_Institution

Dept. of Eng. Phys., Wollongong Univ., NSW, Australia

Volume

1

fYear

1999

fDate

1999

Firstpage

331

Abstract

A silicon-on-insulator diode array with a sensitive depth of 10 microns has been developed for microdosimetry in proton therapy. The detector was coupled to a radiation-hard charge sensitive amplifier with the probe assembly capable of measuring a LET down to 1.2 keV/μm. The device has been successfully tested at two proton therapy centers: The 230 MeV Northeastern Proton Therapy Center, Boston and the 250 MeV Proton Medical Research Center at Tsukuba, Japan. The device offers much improved spatial resolution compared with a proportional gas counter particularly in the critical high dose region around the proton Bragg peak. Due to its small cross-sectional area (0.04 cm²) measurements may also be made in facilities with short high intensity beams

Keywords

biomedical electronics; dosimeters; preamplifiers; radiation therapy; silicon radiation detectors; 230 MeV; 250 MeV; Si; critical high dose region; microdosimetry applications; probe assembly; proportional gas counter; proton Bragg peak; proton therapy; proton therapy centers; radiation-hard charge sensitive amplifier; short high intensity beams; silicon detector; silicon-on-insulator diode array; spatial resolution; Assembly; Charge measurement; Current measurement; Diodes; Medical tests; Medical treatment; Probes; Protons; Radiation detectors; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE

Conference_Location

Seattle, WA

ISSN

1082-3654

Print_ISBN

0-7803-5696-9

Type

conf

DOI

10.1109/NSSMIC.1999.842503

Filename

842503