DocumentCode
1997287
Title
Simulation of transient enhanced diffusion using computationally efficient models
Author
Yu, S.S. ; Kennel, H.W. ; Giles, M.D. ; Packan, P.A.
Author_Institution
Technol. CAD, Intel Corp., Hillsboro, OR, USA
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
509
Lastpage
512
Abstract
We present a computationally efficient model for TED based on scalar ´damage´ dose quantities which are created by implantation and removed during annealing. Spatial effects, extended defects, and effects of damage on dopant solubility are included. This approach is able to reproduce a wide range of conditions relevant to advanced submicron technologies accurately and efficiently.
Keywords
diffusion; annealing; computationally efficient model; damage; dopant solubility; extended defects; ion implantation; scalar damage dose; simulation; spatial effects; submicron technology; transient enhanced diffusion; Annealing; Boron; Computational modeling; Equations; Implants; Ion implantation; Semiconductor process modeling; Silicon; Temperature dependence; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650435
Filename
650435
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