DocumentCode
1997405
Title
Low noise, high count rate charge amplifier with detector embedded front-end transistor and continuous reset
Author
Guazzoni, C. ; Sampietro, Marco ; Fazzi, A. ; Lechner, P.
Author_Institution
Dipt. di Elettronica, Politecnico di Milano, Italy
Volume
1
fYear
1999
fDate
1999
Firstpage
356
Abstract
Detector front-end circuits for spectroscopy applications have to provide a precise and stable amplification of the signal pulse and a reset path for the accumulated signal and leakage current. In the case in which very high energy resolutions are required in conjunction with high count rate capabilities, the required stability in the amplification is only given by a charge amplifier and its front-end should be integrated on the detector chip in order to minimise parasitic capacitances. A two-chip system has been designed and produced. The front-end nJFET, the feedback capacitance and the reset mechanism are integrated on the detector chip. The other components of the charge amplifier are designed on a second chip produced in BiCMOS technology to be coupled to the detector chip
Keywords
BiCMOS analogue integrated circuits; JFET integrated circuits; X-ray detection; nuclear electronics; silicon radiation detectors; BiCMOS technology; Si; continuous reset; detector chip; detector embedded front-end transistor; detector front-end circuits; feedback capacitance; front-end nJFET; high count rate capabilities; leakage current; low noise high count rate charge amplifier; parasitic capacitances; spectroscopy applications; Circuit noise; Detectors; Energy resolution; Leak detection; Leakage current; Low-noise amplifiers; Parasitic capacitance; Pulse amplifiers; Pulse circuits; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium, 1999. Conference Record. 1999 IEEE
Conference_Location
Seattle, WA
ISSN
1082-3654
Print_ISBN
0-7803-5696-9
Type
conf
DOI
10.1109/NSSMIC.1999.842508
Filename
842508
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