DocumentCode
1997504
Title
Semiconductor Structures for 100 GHz Silicon IMPATT Diodes
Author
Luy, J.F. ; Kasper, E. ; Behr, W.
Author_Institution
AEG Research Center Ulm, Sedanstr. 10, D-7900 Ulm, FRG
fYear
1987
fDate
7-11 Sept. 1987
Firstpage
820
Lastpage
825
Abstract
Single Drift double drift and quasi Read double drift (QRDDR) silicon IMPATT diodes for CW operation are compared. It is shown that for high power generation efficient semiconductor structures have to be developed. A theoretical design study predicts an efficiency of 14.1 % for the QRDDR diode at 94 GHz. Experimental investigations are performed with diodes the active layers of which are grown by Si-MBE. The results confirm the predicted differences between the structures: The QRDDR diodes deliver the highest efficiency (up to 11 %) and the highest output power: 910 mW.
Keywords
Charge carrier processes; Contact resistance; Doping profiles; Power generation; Radio frequency; Resistance heating; Semiconductor diodes; Silicon; Temperature dependence; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1987. 17th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1987.333735
Filename
4132441
Link To Document