• DocumentCode
    1997780
  • Title

    A hybrid energy scavenging sensor for long-term mechanical strain monitoring

  • Author

    Huang, Chenling ; Chakrabartty, Shantanu

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
  • fYear
    2011
  • fDate
    15-18 May 2011
  • Firstpage
    2473
  • Lastpage
    2476
  • Abstract
    We had previously reported a self-powered floating- gate level-crossing sensor/processor where the energy for sensing, computation and storage was extracted directly from the input strain variations. However, self-powering was found insufficient for wireless interrogation and configuration of the sensor. In this paper, we present a hybrid energy scavenging sensor where self-powering is employed for long-term ambient mechanical strain monitoring, whereas data digitization, framing, telemetry and high-voltage floating-gate configuration/programming are performed remotely using RF powering. As a hybrid energy scavenger, the sensor can seamlessly harvest working energy from both vibrations and RF signals under different working conditions. Therefore, the sensor does not experience any down- time and can continuously operate by recording key statistics of the ambient strain signals. Sensor prototypes with an integrated 13.56MHz RF interface have been fabricated in a 0.5-μm standard CMOS process and the measured results verify the long-term autonomous monitoring capability of the sensor.
  • Keywords
    CMOS integrated circuits; computerised monitoring; energy harvesting; radiofrequency integrated circuits; radiofrequency measurement; strain measurement; strain sensors; RF interface; RF signal; ambient strain signal; data digitization; frequency 13.56 MHz; high voltage floating gate configuration; high voltage floating gate programming; hybrid energy scavenging sensor; long term ambient mechanical strain monitoring; long term autonomous monitoring capability; self-powered floating gate level-crossing processor; self-powered floating gate level-crossing sensor; standard CMOS process; strain variation; telemetry; wireless interrogation; Arrays; Energy harvesting; Monitoring; Radio frequency; Schottky diodes; Sensors; Strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
  • Conference_Location
    Rio de Janeiro
  • ISSN
    0271-4302
  • Print_ISBN
    978-1-4244-9473-6
  • Electronic_ISBN
    0271-4302
  • Type

    conf

  • DOI
    10.1109/ISCAS.2011.5938105
  • Filename
    5938105