Title :
Advances in amorphous silicon technology for LCDs
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Recent progress in amorphous silicon TFT LCDs is reviewed. Both the screen diagonals and pixel counts of TFT LCDs have increased over the past few years. In this period, remarkable progress has also been achieved in the viewing-angle characteristics. In this paper, the key issue of the next-generation TFT LCD panels is shown to be the aperture ratio. This is discussed from the viewpoint of the design rule reduction and the development of the scaling law.
Keywords :
amorphous semiconductors; elemental semiconductors; flat panel displays; liquid crystal displays; silicon; thin film transistors; LCDs; Si; TFT; aperture ratio; design rule reduction; pixel counts; scaling law; screen diagonals; viewing-angle characteristics; Amorphous silicon; Apertures; Brightness; Chromium; Eyes; Information technology; Laboratories; Liquid crystal displays; Production; Thin film transistors;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650440