Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator

Author

Inanlou, Farzad ; Lourenco, Nelson E. ; Fleetwood, Zachary E. ; Ickhyun Song ; Howard, Duane C. ; Cardoso, Alberto ; Zeinolabedinzadeh, Saeed ; Zhang, Enxia ; Zhang, C.X. ; Paki-Amouzou, Pauline ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3050

Lastpage

3054

Abstract

We investigate the effects of total ionizing dose (TID) on a Gaussian pulse generator implemented in IBM´s new 9HP SiGe BiCMOS platform, which combines 300 GHz fT SiGe HBTs and 90 nm CMOS. Total dose effects were examined using a 10-keV X-ray source. The effects of TID on the performance of the pulse generator were investigated with the pulse generator exhibiting a tpw variation of less than 7% for total dose of up to 3.0 Mrad. This circuit is intended for low-power autonomous high-altitude and space-based imaging radars.

Keywords

BiCMOS integrated circuits; germanium alloys; heterojunction bipolar transistors; pulse generators; radiation effects; silicon alloys; spaceborne radar; 4G HBT Gaussian pulse generator; CMOS technology; SiGe; TID effects; X-ray source; electron volt energy 10 keV; frequency 300 GHz; low-power autonomous high altitude radar; size 90 nm; space-based imaging radar; total ionizing dose; BiCMOS integrated circuits; CMOS integrated circuits; Heterojunction bipolar transistors; Pulse generation; Radar; Silicon germanium; Radar; SiGe BiCMOS; radiation effects; total ionizing dose (TID);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2363160

Filename

6940334