DocumentCode
19993
Title
Leakage Control in 0.4-nm EOT Ru/SrTiOx /Ru Metal-Insulator-Metal Capacitors: Process Implications
Author
Swerts, Johan ; Popovici, Mihaela ; Kaczer, Ben ; Aoulaiche, Marc ; Redolfi, A. ; Clima, S. ; Caillat, Christian ; Wan Chih Wang ; Afanasev, Valeri V. ; Jourdan, Nicolas ; Olk, Christina ; Hody, Hubert ; Van Elshocht, S. ; Jurczak, Malgorzata
Author_Institution
Imec, Leuven, Belgium
Volume
35
Issue
7
fYear
2014
fDate
Jul-14
Firstpage
753
Lastpage
755
Abstract
Leakage currents as low as 10-7 A/cm2 at both 1 V and -1 V top electrode bias in the sub-0.4-nm equivalent SiO2 thickness range are demonstrated in Ru/SrTiOx/Ru metal- insulator-metal capacitors in which the 8.5-nm SrTiOx layer is deposited by atomic layer deposition. The top electrode material and deposition technique as well as the postdeposition anneal are crucial parameters to control the leakage, not only at negative, but also at positive top electrode bias.
Keywords
MIM structures; atomic layer deposition; capacitors; leakage currents; ruthenium; strontium compounds; Ru-SrTiO-Ru; atomic layer deposition; deposition technique; leakage control; leakage currents; metal insulator metal capacitors; top electrode material; voltage 1 V; Capacitors; Electrodes; Leakage currents; MIM capacitors; Random access memory; Tin; Capacitors; DRAM; Ru; SrTiO₃; SrTiO3; dielectric devices; leakage currents;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2322632
Filename
6820790
Link To Document