• DocumentCode
    19994
  • Title

    An Unconventional Hybrid Variable Capacitor With a 2-D Electron Gas

  • Author

    Dianat, Pouya ; Prusak, Richard ; Persano, Anna ; Cola, Adriano ; Quaranta, Fabio ; Nabet, Bahram

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA
  • Volume
    61
  • Issue
    2
  • fYear
    2014
  • fDate
    Feb. 2014
  • Firstpage
    445
  • Lastpage
    451
  • Abstract
    Moderation of internal quantum mechanical energies, such as exchange energy of an unconventional contact, comprised of a system of 2-D charge carriers, improves performance merits of variable capacitors, varactors, mainly in tuning ratio (TR), and sensitivity, S. Energy transfer from the unconventional contact to the dielectric increases the energy density and enhances the capacitance of the varactor. Here, we analyze the performance of an unconventional varactor based on a planar metal-semiconductor-metal (MSM) structure with an embedded layer of high-density 2-D electron gas (2DEG). Through localized field-assisted manipulation of the 2DEG density, a twice larger equilibrium capacitance and a minimum capacitance, less than the geometric capacitance of a conventional MSM, are achieved. Moreover, the maximum capacitance increases through a Batman-shaped capacitance enhancement at a threshold voltage. Therefore, giant is attained while maintaining quality factors of up to 30. Capacitance-voltage characteristics exhibit a switched-capacitor behavior with S as high as 350 that is due to localized transitions from a dense 2DEG to a complete depletion. This MSM 2-D varactor combines the unconventional features of 2DEG with superior electrical properties of MSMs.
  • Keywords
    metal-semiconductor-metal structures; two-dimensional electron gas; varactors; 2D charge carrier; 2D electron gas; Batman shaped capacitance enhancement; capacitance-voltage characteristics; embedded layer; energy density; exchange energy; internal quantum mechanical energy; localized field assisted manipulation; planar metal-semiconductor-metal structure; unconventional hybrid variable capacitor; unconventional varactor; Capacitance; Cathodes; Gallium arsenide; HEMTs; MODFETs; Varactors; 2-D electron gas (2DEG); Schottky; capacitance enhancement; metal–semiconductor–metal (MSM); variable capacitor;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2013.2292922
  • Filename
    6680750