Preparation of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films with ultra-high resistance to annealing in hydrogen atmosphere for ferroelectric memories

Author

Kanehara, T. ; Koiwa, I. ; Okada, Y. ; Ashikaga, K. ; Katoh, H. ; Kaifu, K.

Author_Institution

Adv. Mater. Project, Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

601

Lastpage

604

Abstract

SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) films are fatigue-free and provide low-voltage operation. After annealing in a hydrogen atmosphere, however, such as in passivation, SBT films are reduced and their electrical properties deteriorate. We clarify the degradation mechanism and focus on preparing of SBT films highly resistant to annealing in a hydrogen atmosphere.

Keywords

annealing; bismuth compounds; coating techniques; ferroelectric storage; ferroelectric thin films; hydrogen; materials preparation; passivation; strontium compounds; H atmosphere; H/sub 2/; SBT films; SrBi/sub 2/Ta/sub 2/O/sub 9/; SrBi/sub 2/Ta/sub 2/O/sub 9/ thin film preparation; annealing; degradation mechanism; electrical properties; ferroelectric memory application; low-voltage operation; ultra-high annealing resistance; Annealing; Atmosphere; Bismuth; Electrodes; Grain boundaries; Hydrogen; Hysteresis; Passivation; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650456

Filename

650456