DocumentCode
1999602
Title
Silicon Monolithic Millimeter Wave Impatt Oscillators
Author
Luy, J.F. ; Strohm, K.M. ; Buechler, J.
fYear
1988
fDate
12-15 Sept. 1988
Firstpage
382
Lastpage
387
Abstract
The good efficiency of silicon IMPATT diodes in the upper frequency range and the relatively high thermal conductivity of silicon lead to the concept of a monolithically integrated coplanar IMPATT oscillator. This concept is realized in a prototype for W-band frequencies in CW operation. First measurements indicate oscillations at a frequency of 76 GHz with a continuous wave output power of about 1 mW.
Keywords
Diodes; Etching; Fabrication; Metallization; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Oscillators; Silicon; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1988. 18th European
Conference_Location
Stockholm, Sweden
Type
conf
DOI
10.1109/EUMA.1988.333844
Filename
4132532
Link To Document