Title :
Diffusion mechanism study of arsenic in SiO/sub 2/ using oxygen isotope /sup 18/O as a component element of matrix SiO/sub 2/
Author :
Tsunashima, Y. ; Aoki, N.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
The diffusion mechanism of arsenic (As) in SiO/sub 2/ was studied by the diffusion of oxygen in SiO/sub 2/ using isotope /sup 18/O as a component element of the matrix oxide. The result suggests that As loosens SiO/sub 2/ network bonds and drives a subsequent rearrangement of the network which enhances diffusion of As and oxygen in N/sub 2/ annealing. However, when 10% H/sub 2/ was added to N/sub 2/, As atoms were released from the network in a molecular form and were completely independent of the network rearrangement.
Keywords :
X-ray photoelectron spectra; annealing; arsenic; diffusion; secondary ion mass spectra; semiconductor-insulator boundaries; silicon compounds; /sup 18/O; H/sub 2/-N/sub 2/ mixture; N/sub 2/; N/sub 2/ annealing; N/sub 2/-H/sub 2/; SIMS profiles; Si-SiO/sub 2/:As; SiO/sub 2/ network bond loosening; SiO/sub 2/:As; XPS; diffusion enhancement; diffusion mechanism; matrix oxide; network rearrangement; Annealing; Boron; CMOS logic circuits; Chemical elements; Hydrogen; Impurities; Isotopes; Oxygen; Semiconductor process modeling; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650479
