A low-power ESD-protected 24GHz receiver front-end with π-type input matching network

Author

Wang, Hongrui ; Jiao, Chao ; Zhang, Li ; Zeng, Dajie ; Yang, Dongxu ; Wang, Yan ; Yu, Zhiping

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2011

fDate

15-18 May 2011

Firstpage

2877

Lastpage

2880

Abstract

This paper presents a full ESD-protected receiver front-end for wireless communications around 24GHz, comprising LNA, mixer, VGA, and on-chip balun. A π -type input matching network incorporating ESD capacitance is constructed to realize the source impedance transformation for higher gain. With it, the gain of the first stage is improved while the noise figure is just degraded slightly. The measured results show an input return loss of less than-12dB, 36dB voltage gain, 6.9dB noise figure, and 2dBm output P_1dB. The chip has an HBM ESD robustness of ± 2kV and consumes 34mA from a 1.2V supply with a total area of 1×0.8 mm² using 0.13μm RF CMOS process.

Keywords

CMOS integrated circuits; baluns; electrostatic discharge; field effect MMIC; low noise amplifiers; low-power electronics; microwave receivers; mixers (circuits); wireless channels; π-type input matching network; ESD capacitance; ESD-protected receiver front-end; HBM ESD robustness; LNA; RF CMOS process; VGA; current 34 mA; frequency 24 GHz; gain 36 dB; low-power receiver front-end; mixer; noise figure 6.9 dB; on-chip balun; size 0.13 mum; source impedance transformation; voltage 1.2 V; wireless communications; Electrostatic discharge; Gain; Impedance matching; Junctions; Noise figure; Radio frequency; Resistance; CMOS; LNA; VGA; electrostatic discharge (ESD);

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2011 IEEE International Symposium on

Conference_Location

Rio de Janeiro

ISSN

0271-4302

Print_ISBN

978-1-4244-9473-6

Electronic_ISBN

0271-4302

Type

conf

DOI

10.1109/ISCAS.2011.5938232

Filename

5938232