• DocumentCode
    2000460
  • Title

    High-speed, low-power InSb transistors

  • Author

    Ashley, T. ; Dean, A.B. ; Elliott, C.T. ; Jefferies, R. ; Khaleque, F. ; Phillips, T.J.

  • Author_Institution
    Defence Evaluation & Res. Agency, Malvern, UK
  • fYear
    1997
  • fDate
    10-10 Dec. 1997
  • Firstpage
    751
  • Lastpage
    754
  • Abstract
    High-speed, low-power consumption field-effect transistors fabricated from InSb/In/sub 1-x/Al/sub x/Sb are demonstrated. A 0.7 /spl mu/m gate-length enhancement-mode device shows an f/sub T/, of 74 GHz, and an f/sub max/ of 89 GHz, at a drain voltage below 0.5 V. This is the fastest reported transistor for its gate length, as far as is known.
  • Keywords
    III-V semiconductors; MOSFET; aluminium compounds; indium compounds; millimetre wave field effect transistors; 0.5 V; 0.7 micron; 74 GHz; 89 GHz; EHF; InSb-InAlSb; InSb/In/sub 1-x/Al/sub x/Sb FET; MM-wave MOSFET; SiO/sub 2/; enhancement-mode device; field-effect transistors; high-speed operation; low-power InSb transistors; Capacitance; FETs; Fabrication; Gallium arsenide; Indium; Leakage current; Photonic band gap; Power dissipation; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4100-7
  • Type

    conf

  • DOI
    10.1109/IEDM.1997.650491
  • Filename
    650491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2000460