Dual-damascene interconnects with 0.28 /spl mu/m vias using in situ copper doped aluminum chemical vapor deposition

Author

Sugai, K. ; Chikaki, S. ; Nakajima, T. ; Kikkawa, T.

Author_Institution

ULSI Device Dev. Labs., NEC, Kanagawa, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

781

Lastpage

784

Abstract

Aluminum-copper damascene interconnects have been formed using a chemical vapor deposition technique for the first time. Hydrogen plasma pretreatment for air-exposed TiN layers has been developed in order to fill high-aspect ratio vias and trenches. Al-0.5wt%Cu films were deposited sequentially as Al/Cu/Al films using metal organic precursors. 0.18 /spl mu/m wide trenches with an aspect ratio of 5 were filled with Al-Cu. Dual-damascene via-chains including 0.28-/spl mu/m-diameter vias were formed, and the via resistance was 1.3 /spl Omega/.

Keywords

VLSI; aluminium alloys; chemical vapour deposition; copper; copper alloys; integrated circuit interconnections; integrated circuit metallisation5802328; photolithography; polishing; surface cleaning; 0.28 micron; 1.3 ohm; Al-Cu; Al/Cu/Al film; TiN; air-exposed TiN layer; aspect ratio; dual-damascene interconnect; hydrogen plasma pretreatment; in situ copper doped aluminum chemical vapor deposition; metalorganic precursor; resistance; trench; via chain; Aluminum; Atomic force microscopy; Chemical vapor deposition; Copper; Hydrogen; Large scale integration; Plasma chemistry; Plasma temperature; Scanning electron microscopy; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650498

Filename

650498