Study Of The ESD Behavior Of Different Clamp Configurations In A 0.35/spl mu/m Cmos Technology

Author

Richier, C. ; Maene, N. ; Mabboux, G. ; Bellens, R.

Author_Institution

SGS-THOMSON, 850 rue J.Monnet, BP16, 38921 Golles cedex, France

fYear

1997

fDate

25-25 Sept. 1997

Firstpage

240

Lastpage

245

Keywords

Biological system modeling; CMOS technology; Capacitance; Clamps; Diodes; Electrostatic discharge; MOS devices; Protection; Silicides; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/Electrostatic Discharge Symposium,1997. Proceedings

Conference_Location

Orlando, FL, USA

Print_ISBN

1-878303-69-4

Type

DOI

10.1109/EOSESD.1997.634248

Filename

634248

Link To Document