Title :
A 11 ppm/°c CMOS current reference circuit with no external components
Author :
Imbrea, Damian ; Cojan, Neculai
Author_Institution :
Fac. of Electron., Telecommun. & Inf. Technol., Gh. Asachi Tech. Univ. of Iasi, Iaşi, Romania
Abstract :
A new CMOS current reference circuit is described. The circuit designed in 65 nm CMOS standard process operates in the temperature range [-40...+130] °C with supply voltage from 2.1 V to 3.0 V. The reference current is 1 μA ± 0.9 nA having a line sensitivity of 0.5 nA/V and 200 dB power supply rejection ratio at low frequencies. No curvature compensation techniques are used. The circuit occupies 0.0091 mm2 silicon area.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit design; silicon; CMOS current reference circuit; Si; circuit design; current 1 muA; power supply rejection ratio; size 65 nm; temperature -40 C to 130 C; voltage 2.1 V to 3.0 V; CMOS integrated circuits; Generators; Resistors; Sensitivity; Standards; Temperature sensors; Transistors;
Conference_Titel :
Signals, Circuits and Systems (ISSCS), 2013 International Symposium on
Conference_Location :
Iasi
Print_ISBN :
978-1-4799-3193-4
DOI :
10.1109/ISSCS.2013.6651190
