• DocumentCode
    2001982
  • Title

    A High Isolation DC to 18 GHz Packaged MMIC SPDT Switch

  • Author

    Ezzeddine, A. ; Pengelly, R. ; Badawi, H.

  • fYear
    1988
  • fDate
    12-15 Sept. 1988
  • Firstpage
    1028
  • Lastpage
    1033
  • Abstract
    An high isolation MMIC GaAs SPDT switch was designed using a travelling wave configuration to achieve a very broadband performance from DC to 18 GHz. The SPDT switch die measurements give less than 2.5 dB insertion loss at 18 GHz and a return loss greater than 12 dB over the full bandwidth in both the ON and OFF states. The MMIC chip was packaged in a new 20 GHz package. The packaged switch has insertion loss of better than 3.1 dB an isolation higher than 34 dB at 18 GHz and a good match from DC to 18 GHz. The switch can handle an input power of 0.6 Watt from 1 GHz to 18 GHz.
  • Keywords
    Communication switching; FETs; Frequency; Gallium arsenide; Insertion loss; MMICs; Packaging; Shunt (electrical); Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1988. 18th European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • DOI
    10.1109/EUMA.1988.333945
  • Filename
    4132633