DocumentCode :
2002241
Title :
Synchronous rectifiers versus Schottky diodes: a comparison of the losses of a synchronous rectifier versus the losses of a Schottky diode rectifier
Author :
Blake, Carl ; Kinzer, Dan ; Wood, Peter
fYear :
1994
fDate :
13-17 Feb 1994
Firstpage :
17
Abstract :
A brief description of the differences in current flow through a MOSFET and a Schottky diode establishes the basis for a prediction of future device performance. Two different forward converter designs are used to illustrate the expected performance differences between the synchronous rectifier and Schottky diode designs. The current levels were selected to provide the designer with a more intuitive understanding of which applications benefit most from each type of design
Keywords :
Schottky-barrier diodes; insulated gate field effect transistors; losses; power transistors; rectifying circuits; solid-state rectifiers; MOSFET; Schottky diodes; current levels; device performance; forward converter designs; losses; synchronous rectifier; Electrons; FETs; MOSFET circuits; Performance loss; Power MOSFET; Power supplies; Rectifiers; Schottky diodes; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1994. APEC '94. Conference Proceedings 1994., Ninth Annual
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-1456-5
Type :
conf
DOI :
10.1109/APEC.1994.316424
Filename :
316424
Link To Document :
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