• DocumentCode
    2002241
  • Title

    Synchronous rectifiers versus Schottky diodes: a comparison of the losses of a synchronous rectifier versus the losses of a Schottky diode rectifier

  • Author

    Blake, Carl ; Kinzer, Dan ; Wood, Peter

  • fYear
    1994
  • fDate
    13-17 Feb 1994
  • Firstpage
    17
  • Abstract
    A brief description of the differences in current flow through a MOSFET and a Schottky diode establishes the basis for a prediction of future device performance. Two different forward converter designs are used to illustrate the expected performance differences between the synchronous rectifier and Schottky diode designs. The current levels were selected to provide the designer with a more intuitive understanding of which applications benefit most from each type of design
  • Keywords
    Schottky-barrier diodes; insulated gate field effect transistors; losses; power transistors; rectifying circuits; solid-state rectifiers; MOSFET; Schottky diodes; current levels; device performance; forward converter designs; losses; synchronous rectifier; Electrons; FETs; MOSFET circuits; Performance loss; Power MOSFET; Power supplies; Rectifiers; Schottky diodes; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition, 1994. APEC '94. Conference Proceedings 1994., Ninth Annual
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-1456-5
  • Type

    conf

  • DOI
    10.1109/APEC.1994.316424
  • Filename
    316424