• DocumentCode
    2003033
  • Title

    Generalized Modeling of GaAs Mesfets and Modfets Based on Highly Accurate Broadband Measurements

  • Author

    Kompa, G. ; Schlechtweg, M.

  • Author_Institution
    Dept. of High-Frequency, University of Kassel, Wilh. Allee 73, D-3500 Kassel, Tel.: 0561/804-6364, Telefax: 0561/804-6327, Telex: 99 572 (FRG)
  • fYear
    1989
  • fDate
    4-7 Sept. 1989
  • Firstpage
    179
  • Lastpage
    186
  • Abstract
    A recently defined THLR method for vector network analyzer calibration is used to extract the error-parameters of coax to microstrip transitions with an accuracy hitherto unattained. The scattering coefficients of GaAs FETs such as MESFETs and MODFETs, installed in hybrid technology, are measured and error-corrected up to 40 GHz. A new parameter extraction method is discussed to get reliable bias-dependent model parameters. These are represented in 3D graphs covering the gate-forward, pinch-off, saturation, and non-saturation region as well. Thus analogue and digital operations can be described.
  • Keywords
    Calibration; Coaxial components; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs; Microstrip; Parameter extraction; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1989. 19th European
  • Conference_Location
    London, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1989.334153
  • Filename
    4132682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2003033