Electrical extractions of 1-D doping profiles and effective mobility in MOSFET

A small gate area has very small capacitances that are difficult to measure, making capacitance-voltage (C-V) based techniques difficult or impossible. In view of these experimental difficulties, we tried electrical doping profiling measurement for metal-oxide-semiconductor field-effect transistor (MOSFET) with short gate length and ultra thin oxide thickness and checked the agreement with simulation result. We could get the effective mobility by simple drain current versus drain bias voltage measurement. The calculated effective mobility was smaller than expected value and we explained some reasons. These results should be very useful for the reliability analysis and future MOSFET device design.