• DocumentCode
    2003993
  • Title

    The Enhanced Power Performance of the Dual-Fed Distributed Amplifier

  • Author

    Aitchison, C.S. ; Bukhari, M N ; Tang, O S A

  • Author_Institution
    ERA Technology Ltd, Leatherhead, UK; Brunel University, Uxbridge
  • fYear
    1989
  • fDate
    4-7 Sept. 1989
  • Firstpage
    439
  • Lastpage
    444
  • Abstract
    The small signal advantages of the dual-fed distributed amplifier are known (Ref.l). This paper gives practical results for the large signal behaviour showing a 3 dB improvement in the output power at 1 dB gain compression and a 7 dB improvement in the 3rd order intercept point. Two HMF-0600 MESFETs are used in the design to give 27 dBm output power over the 2 to 7 GHz band. A second version uses two higher power HMF-1200 devices to give 30 dBm output power over the 1 to 13 GHz band. Due to the use of the distributed amplifier technique, the circuits are relatively insensitive to device variations and therefore no circuit tuning is required during fabrication.
  • Keywords
    Circuit optimization; Distributed amplifiers; Fabrication; MESFETs; Noise figure; Performance gain; Power amplifiers; Power generation; Power measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1989. 19th European
  • Conference_Location
    London, UK
  • Type

    conf

  • DOI
    10.1109/EUMA.1989.334002
  • Filename
    4132721