DocumentCode
2005371
Title
Monte Carlo study of velocity overshoot in switching a 0.1-micron CMOS inverter
Author
Laux, S.E. ; Fischetti, M.V.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
877
Lastpage
880
Abstract
The role of steady-state and transient velocity overshoot in switching an unloaded 0.1-micron CMOS inverter is evaluated for the first time using Monte Carlo device simulation. Our results indicate switching times decrease by /spl sim/1 psec for MC versus DD modeling. Unfortunately, no evidence is found that transient velocity overshoot contributes to this decrease in switching times.
Keywords
CMOS logic circuits; Monte Carlo methods; equivalent circuits; integrated circuit modelling; logic gates; semiconductor device models; switching; transient analysis; 0.1 micron; CMOS inverter; Monte Carlo device simulation; steady-state overshoot; switching time reduction; transient overshoot; velocity overshoot; Capacitance; Delay effects; Doping; Inverters; MOSFET circuits; Monte Carlo methods; Scattering; Solids; Steady-state; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650521
Filename
650521
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