Title :
A Novel Trench Capacitor Structure for ULSI DRAMs
Author :
Rajeevakumar, T.V. ; Bronner, G.B.
Author_Institution :
IBM Research Division, NY
Keywords :
Amorphous silicon; Capacitance; Capacitors; Counting circuits; Dielectric substrates; Electrodes; Etching; Random access memory; Stability; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 1991. Digest of Technical Papers., 1991 Symposium on
Conference_Location :
Oiso, Japan
DOI :
10.1109/VLSIT.1991.705963
